Announced at IEDM 2021: Confirmed Reduced Power Consumption and Increased Speed in Write Operations on 16 nm FinFET Logic Process Embedded STT-MRAM Test Chip TOKYO--(BUSINESS WIRE)--Renesas ...
Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...
Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
(Nanowerk News) Researchers from National Taiwan University have developed an ultra-high performance STT-MRAM, called SS-MARM or SL-STT-MARM. The SS-MARM can simultaneously achieve ultra-high MR ratio ...
A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed ...
Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn’t as simple as adding other ...
Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory ...
CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced a comprehensive design ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback