Announced at IEDM 2021: Confirmed Reduced Power Consumption and Increased Speed in Write Operations on 16 nm FinFET Logic Process Embedded STT-MRAM Test Chip TOKYO--(BUSINESS WIRE)--Renesas ...
A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...
Professor Tetsuo Endoh, leading a group of researchers at Tohoku University, has announced the development of an MTJ (Magnetic Tunnel Junction) with 10 ns high-speed write operation, sufficient ...
In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...
Magnetoresistive RAM (MRAM) is one of several new non-volatile memory technologies targeting broad commercial availability, but designing MRAM into chips and systems isn’t as simple as adding other ...
Everspin Technologies has expanded its flagship STT-MRAM product family with the introduction of the EMxxLX devices. This new family targets electronic systems where data persistence and integrity, ...
Magneto-resistive random access memory (MRAM) is one of those technologies that is often talked about as having the potential to change the computer memory landscape. But in actuality, MRAM has been ...
Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...
NUREMBERG, Germany--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced the development of ...
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