Abstract: We have developed an enhancement-mode GaN-on-Si MOS-FET with a thin GaN channel (40nm) on a thick AlGaN back barrier layer (1um), using Au-free 150-mm Si process. The developed device showed ...
Abstract: High frequency detection based on MOS-FET technology was long justified using a mechanism described by the plasma wave detection theory. In this paper we propose a new model based on the ...
This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback