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Ultra-small, high-performance electronics grown directly on 2D semiconductors

In recent years, electronics engineers have been trying to identify semiconducting materials that could substitute for ...
IEEE

High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack

Abstract: We integrate a strained Si channel with HfO/sub 2/ dielectric and TiN metal gate electrode to demonstrate NMOS transistors with electron mobility better than the universal mobility curve for ...
IEEE

On the hot-carrier-induced post-stress interface trap generation in n-channel MOS transistors

Abstract: A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly ...