Abstract: An MOS field plate-protected Schottky-drain (gated Schottky-drain) is successfully integrated on a double-channel AlGaN/GaN MOS-HEMT to provide reverse blocking capability. The leakage ...
Abstract: This letter investigates the coupling conduction mechanism between the MOS-channel and the body diode of planar-gate SiC mosfets (planar mosfets), as well as its influence on third-quadrant ...
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