Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Abstract: Resistive random access memory (RRAM) devices offer a broad range of attractive properties for in-memory computing (IMC) applications, such as nonvolatile storage, low read current, and high ...
Beginning our series on the latest EW BrightSparks of 2025, we profile Jadesola Adeleka, of Loughborough University and a ...
Inspired by OpenSCAD, it has a language and 3D viewer to simplify the modeling experience. This will first build OCCT if needed. Then build the rest of the app. OCCT is cached in the occt_prebuilt ...
President Donald Trump suspended the green card lottery program on Thursday that allowed the suspect in the Brown University and MIT shootings to come to the United States. Homeland Security Secretary ...
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