AI maps complex nanocrystal reactions, revealing new paths in semiconductor synthesis

Professor Joongoo Kang's team from the Department of Physics and Chemistry at DGIST and Professor Sohee Jeong's team from the ...
IEEE

Investigation of Reliability and Optimization of Reprogram Process in 3D NAND Flash Memory Based on Physical Model

Abstract: In this study, we simulate a 3D Bandgap Engineered (BE-TOX) NAND Flash device using the Monte Carlo method. The simulation considers the Incremental Step Pulse Programming (ISPP) and ...
Interesting Engineering

3D magnetic field ‘breakthrough’ for nuclear fusion plasma control wins coveted US award

Three PPPL researchers have earned the prestigious Kaul Foundation Prize for their groundbreaking work in fusion stability.
IEEE

Penta-Level Charge Trap-Based 3D NAND Flash Memory Enabled by Bi-Directional Step-Pulse-Programming and Improvement of Cell Channel Process

Abstract: We present PLC (Penta-level cell, 5 bits/cell) NAND flash memory using 3D charge-trap-flash (CTF) cell. To achieve PLC cell distribution with proper cell read margin, program noise and short ...