Abstract: We demonstrated several new approaches to enable multiple threshold voltage (multi-Vt) solutions by volumeless multi-Vt integrations and metal multi-Vt integrations for 2nm high-performance ...
Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
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