Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...

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Abstract: This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power ...

The module delivers up to 400 W — 200 W per output — within a 2.5-inch footprint. The company says the addition allows engineers to configure as many as 16 isolated outputs from a single supply, ...

YouTube has shared some recent updates to advertising options on YouTube Shorts to help brands connect more naturally with creators and audiences as holiday shopping picks up. As more people discover ...