Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...
Abstract: This article rethinks the basic assumptions often used in analytically modeling parasitic capacitance in inductors. These assumptions are classified in two commonly-used physics-based ...
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