Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: In this work, we present a SPICE-compact model for 2D material (2DM) based FETs, tailored for simulating and optimizing complex digital and analog neuromorphic circuits. Based on our inhouse ...
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