Abstract: Resistive random access memory (RRAM) devices offer a broad range of attractive properties for in-memory computing (IMC) applications, such as nonvolatile storage, low read current, and high ...
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Abstract: We present PLC (Penta-level cell, 5 bits/cell) NAND flash memory using 3D charge-trap-flash (CTF) cell. To achieve PLC cell distribution with proper cell read margin, program noise and short ...
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