Abstract: This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and ...
Abstract: A negative bias temperature instability (NBTI) equivalent circuit model based on P-FinFET of a 12nm CMOS PDK and electrical components and arithmetic units of EDA software is presented. The ...
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