Abstract: With the recent industrial adoption of a new low-power standby mode in the sub-word line drivers (SWD), we report a reliability challenge that occurs on p-type pitch transistor in sub-20-nm ...
Abstract: This letter investigated the time response behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under negative gate bias and illumination stress (NBIS) in ...
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