Abstract: This study examines the impact of commercially available SiC MOSFET gate technologies (trench and planar) on dynamic performances in parallel operation, thus the spread of device parameters ...
Abstract: Sentaurus Device TCAD is enabled to simulate the carrier and lattice heating, trap generation, and the impact of generated traps on parametric shift during Hot Carrier Degradation (HCD) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback