Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
If you’re a regular reader of Hackaday, you may have noticed a certain fondness for Meshtastic devices, and the LoRa protocol ...
Abstract: We presented an ultra-broadband photodetector module toward 200-GHz using a UTC-PD chip and a frequency compensation technique. The fabricated PD module exhibited high 3-dB bandwidth over ...
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