Abstract: In this work, device degradation of metal oxide (MO) thin-film transistors (TFTs) under positive bias stress, linear stress, and saturation stress is systematically investigated. A ...
In recent years, electronics engineers have been trying to identify semiconducting materials that could substitute for ...
Abstract: Charge trapping at oxide defects is a serious reliability concern in MOS transistors. For scaled technology nodes, the impact of charge-trapping events on the device behavior becomes even ...
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