High Resistance and Low Variation 8Kb SOT-MRAM Compute-in-Memory Array Based on 1T-1R Cell Structure
Abstract: Nonvolatile memories (NVMs) have emerged as promising candidates for efficient analog compute-in-memory (CIM). However, high power consumption and large variations in NVMs are key factors ...
Abstract: For resource-constrained AI accelerators applied in edge computing, achieving high power efficiency in neural network (NN) model computation is crucial. However, current designs often ...
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