Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Abstract: This paper presents a practical mixed integer linear programming (MILP) based approach for unit commitment (UC), which is suitable for both traditional and deregulated environments. In ...