V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
Navitas Semiconductor is pivoting toward AI data centers with GaN and SiC power tech, betting long-term growth on next-gen ...
The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
Motorola announced three new smartphone models—edge 70, g57, and g86 Power—in Taiwan on January 12, highlighting a ...
Wolfspeed’s 300mm platform will unify high-volume silicon carbide manufacturing for power electronics with advanced ...
Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors
Mitsubishi Electric will exhibit the new trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, as well as exhibitions in North America, Europe ...
Empower RF Systems has announced the release of its latest C-UAS RF amplifier module, Model 1211, engineered for robust ...
Goertek, a key player in the extended reality (XR) ecosystem, marked its presence at this year's CES in Las Vegas, which ...
The Sports Authority of India will sign an MoU with Safdarjung Hospital’s Sports Injury Centre to ensure priority treatment ...
Locally, Australia’s process automation sector—key for mining and heavy industry—stands at AU$686 million in 2025, heading to ...
SemiQ continues to expand its Gen3 QSiC MOSFET portfolio with 1200-V power modules offering high current density and low thermal resistance. The new seven-device lineup includes high-current S3 ...
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