Abstract: For next-generation advanced logic devices, gate-all-around field-effect transistors (GAAFETs) with characteristic size reaching the 10 nm scale, necessitate thorough consideration of ...
Abstract: The effects of self-heating-induced thermal stress on the quantum transport in p-type gate-all-around (GAA) nanosheet field effect transistors (NSFETs) are theoretically investigated in this ...
This repository contains a Simscape model of a quadrupeded robot able to walk on flat and inclined terrain, with a environment that presents different obstacles, and the posibility of open-loop or ...
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