Abstract: High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be ...
Abstract: This paper presents a simulation-based benchmarking analysis of three reinforcement learning (RL) algorithms—Soft Actor-Critic (SAC), Deep Q-Network (DQN), and Proximal Policy Optimization ...
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