Abstract: This paper investigated a novel silicon carbide (SiC) trench MOSFET with integrated N+-PolySi/SiC HeteroJunction diode (nHJ-TMOS) on the trench sidewalls to realize low power loss and high ...
Abstract: Fast and accurate prerouting timing prediction is crucial in the very-large-scale integration (VLSI) design flow. Existing machine learning (ML)-assisted prerouting timing evaluators neglect ...
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